Photoreflectance measurements on Si δ‐doped GaAs samples grown by molecular‐beam epitaxy
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چکیده
منابع مشابه
Impurity Breakdown in GaAs Samples Grown by Molecular Beam Epitaxy
In this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200oC and 300oC. We vary the temperature and the illumination intensity. For the sample grown at 200oC, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric elds. Below 100K, a clear dependence of the threshold electri...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1990
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.344976